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| c.4teh ta. U ea D Sw SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK2188 (F10F50VX2) 500V 10A FEATURES *oe Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. *oe static Rds(on) is small. The *oe switching time is fast. The APPLICATION *oe Switching power supply of AC 100V input OUTLINE DIMENSIONS Case : E-pack Case : FTO-220 (Unit : mm) *oe High voltage power supply *oe Inverter RATINGS *oeAbsolute Maximum Ratings * = 25*Z*j Tc i Item Symbol Conditions Storage Temperature Tstg Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current* DC*j i ID Continuous Drain Current* Peak) i IDP Continuous Source Current* DC*j i IS PT Total Power Dissipation Single Pulse Avalanche Current IAS Tch= 25*Z Dielectric Strength Vdis Terminals to case, AC 1 minute Mounting Torque TOR * i Recommended torque : 0.3Nm *j Ratings -55*150 150 500 *}30 10 30 10 40 10 2 0.5 Unit *Z V A W A kV N* E m Copyright & Copy;2000 Shindengen Electr www..com VX-2 Series Power MOSFET Electrical Characteristics Tc = 25 Item Symbol Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current IGSS Forward Tranconductance gfs Static Drain-Source On-tate Resistance RDS(ON) Gate Threshold Voltage VTH Source-Drain Diode Forwade Voltage VSD Themal Resistance jc Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff Conditions 2SK2188 ( F10F50VX2 ) Min. 500 2.4 2.5 Typ. Max. 250 0.1 6.3 0.8 3.0 30 890 70 200 70 140 Unit V A ID = 1mA, VGS = 0V VDS = 500V, VGS = 0V VGS = 30V, VDS = 0V ID = 5A, VDS = 10V ID = 5A, VGS = 10V ID = 1mA, VDS = 10V IS = 5A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 10A VDS = 10V, VGS = 0V, f = 1MHZ ID = 5A, VGS = 10V, RL = 30 VGS = 0V S 1.0 3.5 V 1.5 3.12 / nC pF 110 220 ns Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd www..com 2SK2188 20 Tc = -55C Transfer Characteristics 25C 15 Drain Current ID [A] 100C 150C 10 5 VDS = 25V pulse test TYP 0 5 10 15 20 0 Gate-Source Voltage VGS [V] www..com 2SK2188 10 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [] ID = 5A 1 0.1 VGS = 10V pulse test TYP -50 0 50 100 150 Case Temperature Tc [C] www..com 2SK2188 6 Gate Threshold Voltage 5 Gate Threshold Voltage VTH [V] 4 3 2 1 VDS = 10V ID = 1mA TYP -50 0 50 100 150 0 Case Temperature Tc [C] www..com 2SK2188 100 Safe Operating Area 10 100s Drain Current ID [A] 200s 1 R DS(ON) limit 1ms 10ms 0.1 DC Tc = 25C Single Pulse 0.01 1 10 100 1000 Drain-Source Voltage VDS [V] www..com 2SK2188 Transient Thermal Impedance 10 1 Transient Thermal Impedance jc(t) [C/W] 0.1 0.01 10-4 10-2 10-3 10-1 100 101 102 Time t [s] www..com 2SK2188 10000 Capacitance Capacitance Ciss Coss Crss [pF] 1000 Ciss Coss 100 Crss f=1MHz Tc=25C TYP 10 0 20 40 60 80 100 Drain-Source Voltage VDS [V] www..com 2SK2188 100 Power Derating 80 Power Derating [%] 60 40 20 0 0 50 100 150 Case Temperature Tc [C] www..com 2SK2188 500 Gate Charge Characteristics 20 Drain-Source Voltage VDS [V] 15 VDD = 400V 300 200V 100V 10 200 VGS 5 100 ID = 10A TYP 0 0 10 20 30 40 0 50 Gate Charge Qg [nC] Gate-Source Voltage VGS [V] 400 VDS |
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